Semiconductor device, method of manufacturing the same, and phase shift mask

ABSTRACT

A method of manufacturing a semiconductor device including an integrated circuit part in which an integrated circuit is formed and a main wall part including metal films surrounding said integrated circuit part, includes the step of selectively forming a sub-wall part including metal films between the integrated circuit part and the main wall part, in parallel to formation of the integrated circuit part and the main wall part. A sub-wall part which is in an “L” shape is provided between each corner of the main wall part and the integrated circuit part of the resulting semiconductor device.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of Ser. No. 12/357,919,filed Jan. 22, 2009, which is a divisional application of Ser. No.11/352,273, filed Feb. 13, 2006 and issued as U.S. Pat. No. 7,498,659,which is a divisional application of Ser. No. 10/349,934, filed Jan. 24,2003 and issued as U.S. Pat. No. 7,129,565, which is based on and claimsthe priority of Japanese Patent Application No. 2002-072737, filed onMar. 15, 2002 and Japanese Patent Application No. 2002-286687, filed onSep. 30, 2002, the entire contents which being incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device in whichmoisture resistance in a multilayered wire structure is improved and amethod of manufacturing the same, and a phase shift mask usable inmanufacturing the semiconductor device.

2. Description of the Related Art

In recent years, a design rule of the multilayered wire structure has atendency to be reduced in size as the LSI makes its transition. For thisreason, some of wires, which are formed by forming a film for metal wirematerial and directly etching the film, are too small to manufacture.Hence, the following method is adopted as the method of forming thewire. That is, after forming an interlayer insulation film, a trenchpattern or a hole pattern is formed in this interlayer insulation film,and a wire material is embedded in an opening region of the pattern,thereby forming the wire. This method of forming the wire is referred toas a damascene method.

When the wire is formed by the etching, W, Al or an Al alloy is oftenused as a wire material. However, when the damascene method is employed,Cu is sometimes used because of its low electric resistance and highresistance to electromigration.

In manufacturing the semiconductor device, elements such as transistors,contacts, wires, pads are formed on a semiconductor wafer. Thereafter,the semiconductor wafer is divided into a plurality of chips, each ofwhich is packaged using ceramic or plastic.

In order to speed up a transmission rate of a signal, which is importantfor performance of the wire, reduction in capacitance between wires andin capacitance parasitic between wires which are provided in differentlayers is effective. Therefore, emphasis has been recently placed onlowering a dielectric constant of an insulation film which existsbetween the wires provided in the same layer and of the interlayerinsulation film which exists between the wires provided in the differentlayers, as well as lowering the resistance of the wire itself. Further,in order to lower the dielectric constant, a fluorine-doped siliconoxide film, an inorganic insulation film, an organic insulation film,and the like other than a silicon oxide film are recently used as theinterlayer insulation film, instead of the silicon oxide film. Ingeneral, as a distance between atoms or molecules of the materialbecomes larger, the dielectric constant becomes lower due to simplelowering of a film density.

However, a coefficient of thermal expansion of the above-describedinterlayer insulation film having the low dielectric constant issubstantially different from coefficients of thermal expansion of otherconstituting materials such as a substrate. Because of this differencein the coefficient of thermal expansion, large thermal stress isgenerated by the heat treatment to follow. The thermal stress isconcentrated on a corner of the chip to cause stress concentration, andpeeling between layers or a crack may occur at the corner of the chip.When the crack is caused, moisture as a disturbance easily enters intothe chip. The stress concentration due to the difference in thecoefficient of thermal expansion like the above is especiallysignificant in the semiconductor device to which the damascene method isadopted. The reason is that, according to the damascene method, anabundance of portions whose coefficients of thermal expansion aresubstantially different from each other exist, because the interlayerinsulation film is formed on a flattened wire layer or the like, thetrench pattern or the like is formed in the interlayer insulation film,and thereafter, the wire material is embedded in the opening region.Therefore, the conventional semiconductor device to which the damascenemethod is adopted has a disadvantage that it is difficult to secure asufficient moisture resistance.

SUMMARY OF THE INVENTION

The present invention is made in view of the above disadvantage, and itsobject is to provide a semiconductor device which can prevent theincrease in chip area and secure a high moisture resistance whilepreventing peeling in a peripheral edge portion, and a method ofmanufacturing the same, and a phase shift mask usable in manufacturingand the like of the semiconductor device.

As a result of assiduous studies, the inventor of the present inventionhas come up with various forms of the invention described below.

A semiconductor device according to the present invention comprises anintegrated circuit part in which an integrated circuit is formed, a mainwall part including metal films surrounding the integrated circuit part,and a sub-wall part including metal films selectively formed between theintegrated circuit part and the main wall part. The integrated circuitpart, the main wall part and the sub-wall part share a semiconductorsubstrate, and one or two or more interlayer insulation film(s) formedabove the semiconductor substrate, in which openings are selectivelyformed. A part of wires constituting the integrated circuit and a partof the metal films which are provided to each of the main wall part andthe sub-wall part are substantially formed as a same layer.

According to the present invention, since the sub-wall part isselectively formed between the main wall part and the integrated circuitpart, a wall part selectively has a double structure of the main wallpart and the sub-wall part. Therefore, even when large stress isconcentrated on a corner of the semiconductor substrate or the like byadopting the damascene method, the stress is dispersed to the sub-wallpart as well, by disposing the sub-wall part at the position where thestress is easily concentrated. Thereby, an elastic structure is formedat the position in which stress relaxation is not caused due to peelingbetween layers, a crack and the like. Consequently, it is possible tokeep an entry ratio of moisture accompanied by the occurrence of thecrack low, and to ensure a high moisture resistance. Further, since apart of the wires and a part of the metal films are substantially formedas the same layer, the metal film can be formed simultaneously with thewire. Hence, it is possible to avoid the increase in the number ofprocesses.

A method of manufacturing a semiconductor device according to thepresent invention is the method of manufacturing the semiconductordevice including an integrated circuit part in which an integratedcircuit is formed and a main wall part including metal films surroundingthe integrated circuit part. The method comprises the step ofselectively forming a sub-wall part including metal films between theintegrated circuit part and the main wall part, in parallel to formationof the integrated circuit part and the main wall part.

A phase shift mask according to the present invention is a phase shiftmask comprising a phase shifter film formed on a transparent substrate,and a light shield film formed in a scribe line region on thetransparent substrate. A region surrounded by the scribe line region isconstituted of an integrated circuit region with which an integratedcircuit part is to be formed and a peripheral edge region with which aperipheral edge part in a periphery of the integrated circuit part is tobe formed. The light shield film is further formed at least in a part ofthe peripheral edge region and the integrated circuit region.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a layout showing the structure of a semiconductor deviceaccording to a first embodiment of the present invention;

FIG. 2 is a sectional view showing the structure of an integratedcircuit part of the first embodiment;

FIG. 3 is a sectional view showing a section taken along the I-I line inFIG. 1;

FIG. 4 is a layout showing the structure of a resistance value measuringpart of the first embodiment;

FIG. 5 is a sectional view taken along the II-II line in FIG. 4;

FIG. 6 is a layout showing the structure of wall parts of asemiconductor device according to a second embodiment of the presentinvention;

FIG. 7 is a layout showing the structure of wall parts of asemiconductor device according to a third embodiment of the presentinvention;

FIG. 8 is a layout showing the structure of wall parts of asemiconductor device according to a fourth embodiment of the presentinvention;

FIG. 9 is a layout showing the structure of wall parts of asemiconductor device according to a fifth embodiment of the presentinvention;

FIG. 10 is a layout showing the structure of wall parts of asemiconductor device according to a sixth embodiment of the presentinvention;

FIG. 11 is a layout showing the structure of wall parts of asemiconductor device according to a seventh embodiment of the presentinvention;

FIG. 12 is a layout showing the structure of wall parts of asemiconductor device according to an eighth embodiment of the presentinvention;

FIG. 13 is a layout showing the structure of wall parts of asemiconductor device according to a ninth embodiment of the presentinvention;

FIG. 14 is a layout showing the structure of wall parts of asemiconductor device according to a tenth embodiment of the presentinvention;

FIG. 15 is a layout showing the structure of wall parts of asemiconductor device according to an eleventh embodiment of the presentinvention;

FIG. 16 is a layout showing the structure of wall parts of asemiconductor device according to a twelfth embodiment of the presentinvention;

FIG. 17 is a layout showing the structure of wall parts of asemiconductor device according to a thirteenth embodiment of the presentinvention;

FIG. 18A to FIG. 18M are schematic sectional views showing a method ofmanufacturing the semiconductor device according to the first embodimentof the present invention in process order;

FIG. 19 is a plane view showing a wafer after pads are formed;

FIG. 20 is a layout showing a region shown by the broken line in FIG. 19by enlarging the region;

FIG. 21 is a sectional view showing one example of the structure of amain wall part 2 and a sub-wall part 3; and

FIG. 22 is a layout showing the structure when replacement is applied tothe twelfth embodiment shown in FIG. 16.

FIG. 23A and FIG. 23B are a plan view and a cross sectional view showinga phase shift mask according to a fourteenth embodiment of the presentinvention;

FIG. 24A and FIG. 24B are enlarged views showing the phase shift maskaccording to the fourteenth embodiment of the present invention;

FIG. 25A to FIG. 25C are a plan view and cross sectional views showing aphase shift mask according to a fifteenth embodiment of the presentinvention;

FIG. 26A and FIG. 26B are enlarged views showing the phase shift maskaccording to the fifteenth embodiment of the present invention;

FIG. 27A and FIG. 27B are a plan view and a cross sectional view showinga phase shift mask according to a sixteenth embodiment of the presentinvention;

FIG. 28A and FIG. 28B are a plan view and a cross sectional view showinga phase shift mask according to a seventeenth embodiment of the presentinvention; and

FIG. 29A and FIG. 29B are a plan view and a cross sectional view showinga phase shift mask according to an eighteenth embodiment of the presentinvention;

FIG. 30A and FIG. 30B are a plan view and a cross sectional view showinga phase shift mask;

FIG. 31 is a view showing a side lobe (No. 1); and

FIG. 32 is a view showing a side lobe (No. 2).

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, a semiconductor device and a method of manufacturing thesame according to embodiments of the present invention will be explainedconcretely with reference to the attached drawings.

First Embodiment

To begin with, a first embodiment of the present invention will beexplained. FIG. 1 is a layout showing the structure of a semiconductordevice according to the first embodiment of the present invention. FIG.2 is a sectional view showing the structure of an integrated circuitpart of the first embodiment, and FIG. 3 is a sectional view showing asection taken along the I-I line in FIG. 1. FIG. 4 is a layout showingthe structure of a resistance value measuring part of the firstembodiment, and FIG. 5 is a sectional view taken along the II-II line inFIG. 4.

According to the first embodiment, as shown in FIG. 1, a main wall part2 which is, for example, in a rectangular shape is provided so as tosurround an integrated circuit part 1 in which a semiconductorintegrated circuit is formed. The semiconductor device according to thisembodiment is diced along the main wall part 2 outside the main wallpart 2, and is in a rectangular shape in plan view. A sub-wall part 3which is, for example, in an “L” shape is provided between each cornerof the main wall part 2 and the integrated circuit part 1. Portions ofthe sub-wall part 3 which are orthogonal to each other respectivelyextend in parallel to portions of the main wall part 2 which areorthogonal to each other, that is, the portions corresponding to itssides. A space between the main wall part 2 and the sub-wall part 3 is,for example, about 1 μm. Further, a bend of the sub-wall part 3 isplaced closest to a bend of the main wall part 2, that is, a positioncorresponding to a vertex. Additionally, a resistance value measuringpart (resistance value measuring means) 4 is provided between thesub-wall part 3 and the integrated circuit part 1, for measuring aresistance value of the region. In this embodiment, the sub-wall part 3is a first wall piece.

In the integrated circuit part 1, a plurality of MOS transistors and thelike are formed as shown in FIG. 2. For example, a semiconductorsubstrate 101 such as a silicon substrate is demarcated into a pluralityof element active regions by element isolation insulation films 102.Then, gate insulation films 103 and gate electrodes 104 are formed onthe semiconductor substrate 101. On the sides of the gate insulationfilms 103 and the gate electrodes 104, sidewall insulation films 105 areformed. On the surface of the semiconductor substrate 101, source/draindiffusion layers 106 are formed so as to sandwich the gate insulationfilms 103 and the gate electrodes 104 therebetween in plan view.

Further, a silicon nitride film 107 and a silicon oxide film 108, forexample, are formed over the entire surface, and contact holes reachingthe source/drain diffusion layers 106 are formed in the silicon nitridefilm 107 and the silicon oxide film 108. The contact hole is, forexample, about 0.10 to 0.20 μm in diameter. Moreover, TiN films 109, forexample, are formed as glue layers so as to cover the side surfaces andthe bottom surfaces of the contact holes, in each of which a W film 110is embedded.

Furthermore, an organic insulation film 111 and a silicon oxide film112, for example, are formed over the entire surface, and trenches 135reaching the TiN films 109 and the W films 110 are formed in the organicinsulation film 111 and the silicon oxide film 112. Ta films 113, forexample, are formed as barrier metal films so as to cover the sidesurfaces and the bottom surfaces of the trenches 135, in each of which awire 114 which is made of Cu or the like is embedded.

Further, a silicon nitride film 115 and a silicon oxide film 116, forexample, are formed as interlayer insulation films over the entiresurface, and contact holes 136 reaching the underlying wires, that is,the wires 114, are formed in the silicon nitride film 115 and thesilicon oxide film 116. The contact hole is, for example, about 0.15 to0.25 μm in diameter.

Moreover, an organic insulation film 117 and a silicon oxide film 118,for example, are formed over the entire surface, and trenches 137 whichare connected to the contact holes 136 formed in the silicon nitridefilm 115 and the silicon oxide film 116 are formed in the organicinsulation film 117 and the silicon oxide film 118. Ta films 119, forexample, are formed as barrier metal films so as to cover the sidesurfaces and the bottom surfaces of the contact holes 136 and thetrenches 137, in each of which a wire 120 which is made of Cu or thelike is embedded.

A plurality of basic structural bodies 121, each of which is made of thesilicon nitride film 115, the silicon oxide film 116, the organicinsulation film 117, the silicon oxide film 118, the Ta films 119 andthe wires 120 like the above, three of the basic structural bodies 121in total in this embodiment, are provided.

Further, a silicon nitride film 122 and a silicon oxide film 123 areformed on the uppermost basic structural body 121, and contact holes 138reaching the wires 120, which constitute the uppermost basic structuralbody 121, are formed in the silicon nitride film 122 and the siliconoxide film 123. The contact hole is, for example, about 1.00 to 1.10 μmin diameter. Moreover, barrier metal films 124 are formed so as to coverthe side surfaces and the bottom surfaces of the contact holes 138 andto cover a part of the surface of the silicon oxide film 123, and Al orAl alloy films (hereinafter referred to as the Al film) 125 and barriermetal films 126 are formed on the barrier metal films 124. Furthermore,a silicon oxide film 127 is formed over the entire surface so as tocover the barrier metal films 124, the Al films 125 and the barriermetal films 126, and a silicon nitride film 128, for example, is formedon the silicon oxide film 127 as a coating film.

Incidentally, when the two MOS transistors shown in FIG. 2 constitute aCMOS transistor, conduction types of the diffusion layers 106 aredifferent between the respective MOS transistors, and wells (not shown)are appropriately formed in the surface of the semiconductor substrate101.

Meanwhile, as shown in FIG. 3, diffusion layers 106 a are formed in thesurface of the semiconductor substrate 101 in the main wall part 2 andthe sub-wall part 3. Conduction types of the diffusion layers 106 a arenot particularly limited. Further, similarly to the integrated circuitpart 1, the silicon nitride film 107 and the silicon oxide film 108, forexample, are formed over the entire surface, and trenches reaching thediffusion layers 106 a are formed in the silicon nitride film 107 andthe silicon oxide film 108. The trench is, for example, about 0.15 to0.30 μm in width. The TiN films 109, for example, are formed as the gluelayers so as to cover the side surfaces and the bottom surfaces of thetrenches, in each of which the W film 110 is embedded.

Furthermore, similarly to the integrated circuit part 1, the organicinsulation film 111 and the silicon oxide film 112, for example, areformed over the entire surface, and trenches reaching the TiN films 109and the W films 110 are formed in the organic insulation film 111 andthe silicon oxide film 112. The trench is, for example, about 2 μm inwidth. Each of the trenches is formed, for example, so that the TiN film109 and the W film 110 are placed at its center. The Ta films 113, forexample, are formed as the barrier metal films so as to cover the sidesurfaces and the bottom surfaces of the trenches, in each of which ametal film 114 a which is made of Cu or the like is embedded.

Moreover, similarly to the integrated circuit part 1, the siliconnitride film 115 and the silicon oxide film 116, for example, are formedover the entire surface, and trenches reaching the underlying metalfilms, that is, the metal films 114 a, are formed in the silicon nitridefilm 115 and the silicon oxide film 116. The trench is, for example,about 0.20 to 0.35 μm in width. Each of the trenches is formed to beplaced at the center of the trench which is formed in the organicinsulation film 111 and the silicon oxide film 112, for example.Therefore, this trench is, for example, at the same position with thetrench which is formed in the silicon nitride film 107 and the siliconoxide film 108 in plan view.

Further, similarly to the integrated circuit part 1, the organicinsulation film 117 and the silicon oxide film 118 are formed over theentire surface, and trenches which are connected to the trenches formedin the silicon nitride film 115 and the silicon oxide film 116 areformed in the organic insulation film 117 and the silicon oxide film118. The trench is, for example, about 2 μm in width. This trench isformed, for example, so that the trench formed in the silicon nitridefilm 115 and the silicon oxide film 116 is placed at its center.Therefore, this trench is, for example, at the same position with thetrench which is formed in the organic insulation film 111 and thesilicon oxide film 112 in plan view. The Ta films 119, for example, areformed as the barrier metal films so as to cover the side surfaces andthe bottom surfaces of the trenches formed in the silicon nitride film115 and the silicon oxide film 116 and the trenches formed in theorganic insulation film 117 and the silicon oxide film 118, in each ofwhich a metal film 120 a which is made of a Cu film or the like isembedded.

A plurality of basic structural bodies 121 a, each of which is made ofthe silicon nitride film 115, the silicon oxide film 116, the organicinsulation film 117, the silicon oxide film 118, the Ta films 119 andthe metal films 120 a like the above, three of the basic structuralbodies 121 a in total in this embodiment, similarly to the integratedcircuit part 1, are provided.

Further, similarly to the integrated circuit part 1, the silicon nitridefilm 122 and the silicon oxide film 123 are formed on the uppermostbasic structural body 121 a, and trenches reaching the metal films 120a, which constitute the uppermost basic structural body 121 a, areformed in the silicon nitride film 122 and the silicon oxide film 123.The trench is, for example, about 1.15 to 1.25 μm in width. The barriermetal films 124 are formed so as to cover the side surfaces and thebottom surfaces of the trenches and to cover a part of the surface ofthe silicon oxide film 123, and the Al films 125 and the barrier metalfilms 126 are formed on the barrier metal films 124. Moreover, thesilicon oxide film 127 is formed over the entire surface so as to coverthe barrier metal films 124, the Al films 125 and the barrier metalfilms 126, and the silicon nitride film 128, for example, is formed onthe silicon oxide film 127 as the coating film.

In the sub-wall part 3, the trench formed in the silicon nitride film115 and the silicon oxide film 116 and a narrow trench 131 formed in thesilicon nitride film 122 and the silicon oxide film 123 are shorter thanthe trench formed in the organic insulation film 111 and the siliconoxide film 112 and a wide trench 132 formed in the organic insulationfilm 117 and the silicon oxide film 118 and, as shown in FIG. 1, bothend parts of the narrow trench 131 are placed inside both end parts ofthe wide trench 132.

As shown in FIG. 1 and FIG. 4, two comb-like electrodes 5 a and 5 b areprovided in the resistance value measuring part 4. Teeth of thecomb-like electrodes 5 a and 5 b are arranged in an alternating manner.Each of monitor pads for checking to secure moisture resistance 6 a and6 b is connected to one end of each comb-like electrode 5 a and 5 b.Further, in the region between the integrated circuit part 1 and themain wall part 2 where the sub-wall part 3 and the resistance valuemeasuring part 4 are not formed, a plurality of evaluation pads 7 forinputting signals from the outside in evaluating the integrated circuitformed in the integrated circuit part 1 are provided at appropriateintervals.

As shown in FIG. 5, the sectional structure of the comb-like electrodes5 a and 5 b is the same as that of the main wall part 2 and the sub-wallpart 3, except that the metal films are not connected to the substrate.However, the widths of the trenches are different. Namely, in thecomb-like electrodes 5 a and 5 b, the trench formed in the siliconnitride film 115 and the silicon oxide film 116 and the narrow trench133 formed in the silicon nitride film 122 and the silicon oxide film123 are, for example, about 0.20 to 0.35 μm in width, and the trenchformed in the organic insulation film 111 and the silicon oxide film 112and the wide trench 134 formed in the organic insulation film 117 andthe silicon oxide film 118 are, for example, about 0.6 μm in width.Further, spaces between the teeth of the comb-like electrodes 5 a and 5b are, for example, about 0.2 μm. A part of the Al films 125 is exposedfrom the silicon nitride film 128 and the silicon oxide film 127 to makethe pads 6 a and 6 b.

In thus-structured first embodiment, the sub-wall part 3 in the “L”shape is selectively provided inside the main wall part 2 in therectangular shape in plan view, and at each of the four corners of themain wall part 2, at which stress is most concentrated, and a pluralityof the metal films constituting the main wall part 2 and the sub-wallpart 3 are connected to the semiconductor substrate 101, and hence, thestress is easily dispersed at the corners. Therefore, even if the stressis concentrated due to heat treatment or the like, peeling betweenlayers and a crack are unlikely to occur, as compared with theconventional art. Further, even if the crack and the like occur at thecorner, moisture from the outside hardly reaches the integrated circuitpart 1 since the main wall part 2 and the sub-wall part 3 have thedouble structure. Consequently, according to this embodiment, it ispossible to ensure an extremely high moisture resistance.

Furthermore, since the position where the sub-wall part 3 is formed isthe region where the pads and the like are not formed and the elementparticularly affecting the function of the semiconductor device does notexist in the conventional art, a chip area hardly increases even whenthe sub-wall part 3 is provided at this position.

Moreover, the main wall part 2 and the sub-wall part 3 can be formed bychanging mask shapes in forming the silicon nitride film, the siliconoxide film, the organic insulation film, the wire and the like whichconstitute the integrated circuit part 1, and therefore, it is alsopossible to avoid the increase in the number of manufacturing processes.

Furthermore, potentials which are different from each other can beapplied to the pads 6 a and 6 b in the resistance value measuring part4, thereby measuring a resistance value therebetween. If there is entryof moisture, a short circuit occurs and the resistance value decreases.By measuring the resistance value, it is possible to determine whetherthere is the entry of moisture or not. Hence, it is possible to obtainhigh reliability.

Second Embodiment

Next, a second embodiment of the present invention will be explained.FIG. 6 is a layout showing the structure of wall parts of asemiconductor device according to the second embodiment of the presentinvention.

According to the second embodiment, the structure of a sub-wall part isdifferent from that of the first embodiment. In concrete, as shown inFIG. 6, the length of a narrow trench 131 and the length of a widetrench 132 in a sub-wall part 3 a are the same with reference to abending point, and, respective end parts are at the same positions inplan view. The structure of a section of each position of the sub-wallpart 3 a which crosses perpendicularly to a direction toward which thetrenches extend is the same as that of the sub-wall part 3 in the firstembodiment, except for the lengths of the trenches as described above.In this embodiment, the sub-wall part 3 a is a first wall piece.

It is also possible to obtain the same effects as those of the firstembodiment according to the second embodiment as above.

Third Embodiment

Next, a third embodiment of the present invention will be explained.FIG. 7 is a layout showing the structure of wall parts of asemiconductor device according to the third embodiment of the presentinvention.

According to the third embodiment as well, the structure of a sub-wallpart is different from that of the first embodiment. In concrete, asshown in FIG. 7, a sub-wall part 3 b has a plan shape in which both endparts of the sub-wall part 3 of the first embodiment are bentperpendicularly toward the main wall part 2 side and are connected tothe main wall part 2. In addition, a narrow trench 131 in the sub-wallpart 3 b is connected to a narrow trench 131 in the main wall part 2,and a wide trench 132 in the sub-wall part 3 b is connected to a widetrench 132 in the main wall part 2. The structure of a section of eachposition of the sub-wall part 3 b which crosses perpendicularly to adirection toward which the trenches extend is the same as that of thesub-wall part 3 in the first embodiment, except for the plan shape asdescribed above. In this embodiment, the sub-wall part 3 b is a firstwall piece.

It is also possible to obtain the same effects as those of the firstembodiment according to the third embodiment as above. Further, sincethe sub-wall part is coupled to the main wall part, it is more unlikelythat a crack makes progress. Hence, an insulation film, into whichmoisture easily enters, is completely cut between the inside and theoutside of the sub-wall part, whereby peeling is more unlikely to occur.

Fourth Embodiment

Next, a fourth embodiment of the present invention will be explained.FIG. 8 is a layout showing the structure of wall parts of asemiconductor device according to the fourth embodiment of the presentinvention.

According to the fourth embodiment as well, the structure of a sub-wallpart is different from that of the first embodiment. In concrete, asshown in FIG. 8, a plan shape of a sub-wall part 3 c is a rectangularshape. The structure of a section of each position of the sub-wall part3 c which crosses perpendicularly to a direction toward which thetrenches extend is the same as that of the sub-wall part 3 in the firstembodiment, except for the plan shape as described above. In addition,comb-like electrodes 5 a and 5 b (not shown in FIG. 8) which constitutea resistance value measuring part 4 are arranged, for example, so as tosandwich the sub-wall part 3 c between the main wall part 2 andthemselves. More specifically, the comb-like electrodes 5 a and 5 b arearranged, for example, along two sides which are alienated from a vertexof the main wall part 2, out of four sides constituting the sub-wallpart 3 c in the rectangular shape in plan view. In this embodiment, thesub-wall part 3 c is a fourth wall piece.

It is also possible to obtain the same effects as those of the firstembodiment according to the fourth embodiment as above.

Fifth Embodiment

Next, a fifth embodiment of the present invention will be explained.FIG. 9 is a layout showing the structure of wall parts of asemiconductor device according to the fifth embodiment of the presentinvention.

According to the fifth embodiment as well, the structure of a sub-wallpart is different from that of the first embodiment. In concrete, asshown in FIG. 9, a plurality of wall pieces, two rectangular wall pieces3 d 1 and 3 d 2 in this embodiment, are provided as a sub-wall part 3 d.In this embodiment, the wall piece 3 d 2 is a fourth wall piece, and thewall piece 3 d 1 is a fifth wall piece. The structure of a section ofeach position of the wall pieces 3 d 1 and 3 d 2 constituting thesub-wall part 3 d which crosses perpendicularly to a direction towardwhich the trenches of extend is the same as that of the sub-wall part 3in the first embodiment, except for the plan shape as described above.

According to the fifth embodiment as described above, it is possible toobtain a higher moisture resistance.

Incidentally, the sub-wall part 3 d may be structured by three or moreof the wall pieces.

Sixth Embodiment

Next, a sixth embodiment of the present invention will be explained.FIG. 10 is a layout showing the structure of wall parts of asemiconductor device according to the sixth embodiment of the presentinvention.

According to the sixth embodiment as well, the structure of a sub-wallpart is different from that of the first embodiment. In concrete, asshown in FIG. 10, a plurality of, for example, three wall pieces 3 e 1to 3 e 3 are arranged at, for example, regular intervals from a cornerof the main wall part 2 toward an integrated circuit part 1 side, toconstitute a sub-wall part 3 e. Each of the wall pieces 3 e 1 to 3 e 3has the same structure as that of the sub-wall part 3 of the firstembodiment. In this embodiment, the wall pieces 3 e 1 to 3 e 3 are firstwall pieces.

According to the sixth embodiment as described above, it is alsopossible to obtain a higher moisture resistance, similarly to the fifthembodiment.

Incidentally, the sub-wall part 3 e may be structured by two or four ormore wall pieces each of which has the same structure as that of thesub-wall part 3.

Seventh Embodiment

Next, a seventh embodiment of the present invention will be explained.FIG. 11 is a layout showing the structure of wall parts of asemiconductor device according to the seventh embodiment of the presentinvention.

According to the seventh embodiment as well, the structure of a sub-wallpart is different from that of the first embodiment. In concrete, asshown in FIG. 11, a wall piece 3 f 1 which is shorter than a wall piece3 f 2 is arranged on an integrated circuit part 1 side from the wallpiece 3 f 2 which has the same structure as that of the sub-wall part 3of the first embodiment, to constitute a sub-wall part 3 f. Thestructure of a section of each position of the wall piece 3 f 1 whichcrosses perpendicularly to a direction toward which the trenches extendis the same as that of the sub-wall part 3 in the first embodiment. Inthis embodiment, the wall piece 3 f 2 is a first wall piece, and thewall piece 3 f 1 is a second wall piece.

According to the seventh embodiment as described above, it is alsopossible to obtain a higher moisture resistance, similarly to the fifthand the sixth embodiments.

Eighth Embodiment

Next, an eighth embodiment of the present invention will be explained.FIG. 12 is a layout showing the structure of wall parts of asemiconductor device according to the eighth embodiment of the presentinvention.

According to the eighth embodiment as well, the structure of a sub-wallpart is different from that of the first embodiment. In concrete, asshown in FIG. 12, a wall piece 3 g 1 which surrounds the wall pieces 3 f1 and 3 f 2 of the seventh embodiment with the main wall part 2 isarranged to constitute a sub-wall part 3 g. The structure of a sectionof each position of the wall piece 3 g 1 which crosses perpendicularlyto a direction toward which the trenches extend is the same as that ofthe sub-wall part 3 in the first embodiment. In this embodiment, thewall piece 3 g 1 is a third wall piece.

According to the eighth embodiment as described above, it is alsopossible to obtain a higher moisture resistance, similarly to the fifthto the seventh embodiments.

Ninth Embodiment

Next, a ninth embodiment of the present invention will be explained.FIG. 13 is a layout showing the structure of wall parts of asemiconductor device according to the ninth embodiment of the presentinvention.

According to the ninth embodiment as well, the structure of a sub-wallpart is different from that of the first embodiment. In concrete, asshown in FIG. 13, wide trenches 132 a which are the same as the trenches132 of the wall pieces 3 f 1 and 3 f 2 of the seventh embodiment areformed in the organic insulation film 117 and the silicon oxide film 118which exist between the wall pieces 3 f 1 and 3 f 2, and the Ta films119 and the metal films 120 a are embedded in the trenches 132 a, toconstitute a sub-wall part 3 h.

According to the ninth embodiment as described above, it is alsopossible to obtain a higher moisture resistance, similarly to the fifthto the eighth embodiments.

Tenth Embodiment

Next, a tenth embodiment of the present invention will be explained.FIG. 14 is a layout showing the structure of wall parts of asemiconductor device according to the tenth embodiment of the presentinvention.

According to the tenth embodiment as well, the structure of a sub-wallpart is different from that of the first embodiment. In concrete, asshown in FIG. 14, the wide trenches 132 a which are the same as thetrenches 132 of the wall pieces 3 f 1 and 3 f 2 of the seventhembodiment are formed in the organic insulation film 117 and the siliconoxide film 118 which exist between the wall pieces 3 f 1 and 3 f 2. Inaddition, narrow trenches 131 a which are the same as the trenches 131of the wall pieces 3 f 1 and 3 f 2 are formed in the silicon nitridefilm 115 and the silicon oxide film 116 which exist between the wallpieces 3 f 1 and 3 f 2. The Ta films 119 and the metal films 120 a areembedded in the trenches 131 a and 132 a, to constitute a sub-wall part3 i.

According to the tenth embodiment as described above, it is alsopossible to obtain a higher moisture resistance, similarly to the fifthto the ninth embodiments.

Eleventh Embodiment

Next, an eleventh embodiment of the present invention will be explained.FIG. 15 is a layout showing the structure of wall parts of asemiconductor device according to the eleventh embodiment of the presentinvention.

According to the eleventh embodiment as well, the structure of asub-wall part is different from that of the first embodiment. Inconcrete, as shown in FIG. 15, a sub-wall part 3 j which is in an “L”shape and both of whose ends are connected to the main wall part 2 isprovided. The structure of a section of each position of the sub-wallpart 3 j which crosses perpendicularly to a direction toward which thetrenches extend is the same as that of the sub-wall part 3 in the firstembodiment. In this embodiment, the sub-wall part 3 j is a sixth wallpiece.

According to the eleventh embodiment as described above, it is alsopossible to obtain a higher moisture resistance, similarly to the fifthto the tenth embodiments.

Twelfth Embodiment

Next, a twelfth embodiment of the present invention will be explained.FIG. 16 is a layout showing the structure of wall parts of asemiconductor device according to the twelfth embodiment of the presentinvention.

According to the twelfth embodiment, a sub-wall part has the structurein which the sub-wall part 3 d of the fifth embodiment and the sub-wallpart 3 j of the eleventh embodiment are combined. In concrete, as shownin FIG. 16, the wall pieces 3 d 1 and 3 d 2 of the fifth embodiment aredisposed in a square-shaped region existing between a wall piece 3 k 1which has the same structure as that of the sub-wall part 3 j of theeleventh embodiment and the main wall part 2, to constitute a sub-wallpart 3 k. In this embodiment, the wall piece 3 k 1 is a sixth wallpiece.

According to the twelfth embodiment as described above, it is alsopossible to obtain a higher moisture resistance, similarly to the fifthto the eleventh embodiments.

Thirteenth Embodiment

Next, a thirteenth embodiment of the present invention will beexplained. FIG. 17 is a layout showing the structure of wall parts of asemiconductor device according to the thirteenth embodiment of thepresent invention.

According to the thirteenth embodiment, the structure of a sub-wall partis different from that of the twelfth embodiment. In concrete, as shownin FIG. 17, the wide trench 132 extends to the organic insulation film117 and the silicon oxide film 118 which exist between the wall pieces 3d 1 and 3 d 2 constituting the sub-wall part 3 k of the twelfthembodiment, and further to the inside of the square-shaped region in thewall piece 3 d 2. The Ta film 119 and the metal film 120 a are embeddedin the trench 132, to constitute a sub-wall part 3 m.

According to the thirteenth embodiment as described above, it is alsopossible to obtain a higher moisture resistance, similarly to the fifthto the twelfth embodiments.

—Method of Manufacturing Semiconductor Device—

Next, a method of manufacturing the semiconductor device according tothe first embodiment will be explained. FIG. 18A to FIG. 18M areschematic sectional views showing the method of manufacturing thesemiconductor device according to the first embodiment of the presentinvention in process order. Incidentally, only the region correspondingto the main wall part 2 will be illustrated in FIG. 18A to FIG. 18M.

First, the element isolation insulation film 102 is formed on thesurface of the semiconductor substrate 101 in a state of a wafer by, forexample, the LOCOS method, the STI method or the like. Thereafter, thegate insulation film 103, the gate electrode 104, the sidewallinsulation film 105 and the source/drain diffusion layer 106 are formedin the integrated circuit part 1. Further, in the main wall part 2 andthe sub-wall part 3, the diffusion layers 106 a and 106 b areselectively formed simultaneously with the formation of the source/draindiffusion layer 106. Next, the silicon nitride film 107 and the siliconoxide film 108 are formed over the entire surface by, for example, theplasma CVD method. The silicon nitride film 107 and the silicon oxidefilm 108 are, for example, 70 nm and 1000 nm in thickness, respectively.Next, the silicon oxide film 108 is flattened by, for example, thechemical mechanical polishing (CMP), thereby eliminating the differencein levels. After this processing of flattening, the silicon oxide film108 is, for example, 700 nm in thickness. Thereafter, a photoresist 201is applied onto the silicon oxide film 108, and the photoresist 201 isexposed and developed. Thereby, a pattern 201 a for forming the contacthole in the integrated circuit part 1 and the narrow trenches 131 and133 in the main wall part 2 and the sub-wall part 3 is formed in thephotoresist 201. Incidentally, as to the resistance value measuring part4, the element isolation insulation film may be formed on the surface ofthe semiconductor substrate 101 over the entire region of the resistancevalue measuring part 4, simultaneously with the formation of the elementisolation insulation film 102, for example. Alternatively, the elementisolation insulation film may be formed on the surface of thesemiconductor substrate 101 only in the region where the electrodes 5 aand 5 b are to be formed.

Subsequently, as shown in FIG. 18B, by using the photoresist 201 as amask, the silicon oxide film 108 and the silicon nitride film 107 aresubjected to anisotropic etching using a CF group gas. Thereby, thecontact hole is formed in the integrated circuit part 1, and the narrowtrenches 131 and 133 are formed in the main wall part 2, the sub-wallpart 3 and the resistance value measuring part 4. Thereafter, thephotoresist 201 is removed, and the TiN film 109 is formed as the gluelayer in the contact hole, the narrow trenches 131 and 133 and on thesilicon oxide film 108 by, for example, the sputtering, the CVD methodor the like. Further, the W film 110 is formed on the TiN film 109 by,for example, the CVD method or the like. The TiN film 109 is, forexample, 50 nm in thickness, and the W film 110 is, for example, 400 nmin thickness. Then, the TiN film 109 and the W film 110 on the siliconoxide film 108 are removed by the CMP method or the like, so that theTiN film 109 and the W film 110 remain only in the contact hole and thenarrow trenches 131 and 133.

The case where damage is caused to the semiconductor substrate 101during the etching of the silicon oxide film 108 and the silicon nitridefilm 107 or during the removal of the photoresist 201 is explained.First, an etching selection ratio between the silicon oxide film 108 andthe silicon nitride film 107 is appropriately adjusted by adjustingprocess conditions such as a ratio of C quantity to F quantity of the CFtype gas, a ratio of C quantity to H quantity, flow volumes of O₂ gasand Ar gas, a total pressure, partial pressure ratio, temperature,plasma power, substrate potential and the like. Then, only the siliconoxide film 108 is subjected to the etching. Next, the photoresist 201 isremoved by the ashing using O₂, and thereafter, the silicon nitride film107 may be subjected to the etching under the condition where the damageto the semiconductor substrate 101 is unlikely to be caused.

After removing the unnecessary TiN film 109 and the W film 110, as shownin FIG. 18C, an organic insulation film material is applied by, forexample, the spin coating over the entire surface. Then, the organicinsulation film material undergoes heat treatment which is suitable forthis material, for example, the heat treatment at 400° C. for 60minutes. Thereby, the organic insulation film material is hardened andthe organic insulation film 111 is formed. Further, the silicon oxidefilm 112 is formed on the organic insulation film 111. Both of theorganic insulation film 111 and the silicon oxide film 112 are, forexample, 250 nm in thickness. Thereafter, a photoresist 202 is appliedonto the silicon oxide film 112, and the photoresist 202 is exposed anddeveloped. Thereby, a pattern 202 a for forming the trench 135 for thewire in the integrated circuit part 1 and the wide trenches 132 and 134in the main wall part 2, the sub-wall part 3 and the resistance valuemeasuring part 4 is formed in the photoresist 202.

Subsequently, as shown in FIG. 18D, the silicon oxide film 112 issubjected to the anisotropic etching by using the photoresist 202 as amask, and thereafter, the organic insulation film 111 is subjected tothe etching using a mixed gas of H₂ and N₂. Thereby, the trench 135 isformed in the integrated circuit part 1, and the wide trenches 132 and134 are formed in the main wall part 2, the sub-wall part 3 and theresistance value measuring part 4. At this time, the photoresist 202 isremoved together with the organic insulation film 111, but the siliconoxide film 112 which exists underneath thereof is not subjected to theetching. Next, the Ta film 113 is formed as the barrier metal film inthe trenches 135, 132 and 134 and on the silicon oxide film 112 by, forexample, the sputtering or the like. Further, a film for wire materialto become the wire 114 and the metal film 114 a, for example, the Cufilm, is formed on the Ta film 113 by, for example, the plating methodor the like. It should be noted that, when the film for wire material isformed by the plating method, it is preferable to form a seed layerafter forming the Ta film 113 by the sputtering, and thereafter, to formthe film for wire material. The Ta film 113 is, for example, 30 nm inthickness and the film for wire material is, for example, 1800 nm inthickness.

Subsequently, the Ta film 113 and the film for wire material on thesilicon oxide film 112 are removed by the CMP method or the like, sothat the Ta film 113 and the film for wire material remain only in thetrenches 135, 132 and 134. As a result of this, as shown in FIG. 18E,the wire 114 and the metal film 114 a are formed.

Then, as shown in FIG. 18F, the silicon nitride film 115 and the siliconoxide film 116 are formed over the entire surface in sequence. Thesilicon nitride film 115 is, for example, 50 nm in thickness, and thesilicon oxide film 116 is, for example, 800 nm in thickness. The siliconnitride film 115 functions as an etching stopper film and a diffusionpreventing film. Thereafter, the silicon oxide film 116 is flattened by,for example, the CMP, thereby eliminating the difference in levels.After this processing of flattening, the silicon oxide film 116 is, forexample, 400 nm in thickness. Incidentally, the silicon oxide film 116having the thickness of, for example, about 400 nm may be formed on thesilicon nitride film 115 in order to omit the process of the CMP. Next,the organic insulation film 117 and the silicon oxide film 118 areformed on the silicon oxide film 116 in sequence. As described above,the organic insulation film 117 can be formed by applying, for example,the organic insulation film material by the spin coating, allowing theorganic insulation film material to undergo the appropriate heattreatment and hardening the organic insulation film material. Theorganic insulation film 117 and the silicon oxide film 118 are, forexample, 250 nm in thickness.

Thereafter, a metal film 203 which is used as a hard mask in forming thetrench is formed on the silicon oxide film 118. The metal film 203 is,for example, the TiN film, and its thickness is, for example, 100 nm.Further, a photoresist 204 is applied on the metal film 203, and thephotoresist 204 is exposed and developed. Thereby, a pattern 204 a forforming the trench 137 in the integrated circuit part 1 and the widetrenches 132 and 134 in the main wall part 2, the sub-wall part 3 andthe resistance value measuring part 4 is formed in the photoresist 204.

Subsequently, as shown in FIG. 18G, by using the photoresist 204 as amask, the metal film 203 is subjected to the etching using a Cl typegas. Thereby, the pattern 204 a is transferred to the metal film 203 toform a pattern 203 a. Then, the photoresist 204 is removed by theashing. Next, a photoresist 205 is applied over the entire surface, andthe photoresist 205 is exposed and developed. Thereby, a pattern 205 afor forming the contact hole 136 in the integrated circuit part 1 andthe narrow trenches 131 and 133 in the main wall part 2, the sub-wallpart 3 and the resistance value measuring part 4 is formed in thephotoresist 205.

Subsequently, as shown in FIG. 18H, the silicon oxide film 118 issubjected to the etching by using the photoresist 205 as a mask.Further, by using the silicon oxide film 118 as a mask, the organicinsulation film 117 is subjected to the etching using a mixed gas of H₂and N₂, thereby forming the contact hole 136 in the integrated circuitpart 1 and the narrow trenches 131 and 133 in the main wall part 2, thesub-wall part 3 and the resistance value measuring part 4. At this time,the photoresist 205 is removed together with the organic insulation film117, but the metal film 203 and the silicon oxide film 118 which existunderneath thereof are not subjected to the etching. It should be notedthat, if displacement is caused in forming the pattern 203 a in themetal film 203, it is preferable to remove the unnecessary part of themetal film 203 using the photoresist 205 as a mask before the etching ofthe silicon oxide film 118.

Subsequently, as shown in FIG. 18J, the silicon oxide films 118 and 116are subjected to the etching by using the metal film 203 and the organicinsulation film 117 as masks. As a result of this, the pattern 203 a istransferred to the silicon oxide film 118, and the patterns formed inthe silicon oxide film 118 and the organic insulation film 117 aretransferred to the silicon oxide film 116. At this time, the etching ofthe silicon oxide film 118 stops on the organic insulation film 117, andthe etching of the silicon oxide film 116 stops on the silicon nitridefilm 115, which functions as the etching stopper film.

Subsequently, as shown in FIG. 18J, the organic insulation film 117 issubjected to the anisotropic etching using the metal film 203 and thesilicon oxide film 118 as masks. Thereafter, the silicon nitride film115 is subjected to the anisotropic etching using the silicon oxide film116 as a mask. Consequently, the contact hole 136 and the trench 137 areformed in the integrated circuit part 1, the trenches 131 and 133 areformed in the main wall part 2 and the sub-wall part 3, and the trenches132 and 134 are formed in the resistance value measuring part 4.Incidentally, the anisotropic etching of the organic insulation film 117may be carried out after the anisotropic etching of the silicon nitridefilm 115.

Subsequently, as shown in FIG. 18K, the Ta film 119 is formed as thebarrier metal film in the trenches 131 to 135, the contact hole 136 andon the metal film 203 which come to the surface by, for example, thesputtering or the like. Further, a film for wire material to become thewire 120 and the metal film 120 a, for example, a Cu film, is formed onthe Ta film 119 by, for example, the plating method or the like. Itshould be noted that, when the film for wire material is formed by theplating method, it is preferable to form a seed layer after forming theTa film 119 by the sputtering, and thereafter, to form the film for wirematerial. The Ta film 119 is, for example, 30 nm in thickness and thefilm for wire material is, for example, 1800 nm in thickness.

Subsequently, the metal film 203, the Ta film 119 and the film for wirematerial on the silicon oxide film 118 are removed by the CMP method orthe like, so that the Ta film 119 and the film for wire material remainonly in the trenches 131 to 135 and in the contact hole 136 which cameto the surface. As a result of this, as shown in FIG. 18L, the metalfilm 120 a is formed in the main wall part 2, the sub-wall part 3, andthe resistance value measuring part 4, and the wire 120 (not shown inFIG. 18L) is formed in the integrated circuit part 1. Next, the siliconnitride film 115 is formed again over the entire surface, and theprocess shown in FIG. 18F to the process shown in FIG. 18L are repeatedfor a predetermined number of times.

Then, as shown in FIG. 18M, after forming the uppermost basic structuralbodies 121 and 121 a, the silicon nitride film 122 and the silicon oxidefilm 123 are formed over the entire surface. Thereafter, the trenches131 and 133 and the contact hole 138 are formed in the silicon oxidefilm 123 and the silicon nitride film 122 using a photoresist (notshown) in which a predetermined pattern is formed. Next, the barriermetal film 124 and the Al film 125 are formed in the trenches 131 and133, the contact hole 138 and on the silicon oxide film 123, andfurther, the barrier metal film 126 is formed on the Al film 125. Next,the barrier metal film 126, the Al film 125 and the barrier metal film124 are patterned into predetermined shapes, on which the silicon oxidefilm 127 is formed over the entire surface. Then, the silicon nitridefilm 128 is formed on the silicon oxide film 127 as the coating film.

Thereafter, openings are formed at predetermined positions in thesilicon nitride film 128 and the silicon oxide film 127, therebyselectively exposing the barrier metal film 126. Further, the exposedbarrier metal film 126 is subjected to the etching, thereby exposing theAl film 125. This exposed portions become the monitor pads for checkingto secure moisture resistance 6 a and 6 b and the evaluation pads 7.FIG. 19 is a plane view showing the wafer after the pads are formed, andFIG. 20 is a layout showing a region shown by the broken line in FIG. 19by enlarging the region. When the monitor pads for checking to securemoisture resistance 6 a and 6 b and the evaluation pads 7 are formed,there exists effective chip regions 8 (the region shown by the hatchingin FIG. 19) which is spaced from a periphery of the wafer by a fixeddistance or more. Thereafter, the effective chip region 8 is diced alongcutting lines 9 which are center lines between the adjacent main wallparts 2, thereby dicing the wafer into a plurality of chips.

Thus, it is possible to manufacture the semiconductor device accordingto the first embodiment.

Note that, when manufacturing the semiconductor devices according to thesecond to the thirteenth embodiments, it is suitable to change thepatterns for forming the sub-wall part 3 and the resistance valuemeasuring part 4.

Fourteenth Embodiment

In the method of manufacturing the semiconductor device described above,a phase shift mask of, for example, a halftone type is used inpatterning a photoresist.

The halftone phase shift mask will be explained using FIG. 30A and FIG.30B. FIG. 30A and FIG. 30B are a plan view and a cross sectional viewshowing a phase shift mask. FIG. 30A is a plan view and FIG. 30B is across sectional view taken along the III-III line in FIG. 30A.

As shown in FIG. 30A and FIG. 30B, a translucent phase shifter film 402is formed on a transparent substrate 400. As the phase shifter film 402,for example, one which shifts the phase of lights transmittingtherethrough by 180 degrees is used.

In an integrated circuit region 404 with which an integrated circuitpart is to be formed, the phase shifter film 402 has contact holepatterns 407 formed therein. The contact hole patterns 407 are intendedfor forming contact holes.

In a peripheral edge region 406 with which a peripheral edge part in theperiphery of the integrated circuit part is to be formed, the phaseshifter film 402 has a main wall part pattern 408 and a sub-wall partpattern 410 formed therein. The main wall part pattern 408 is a patternfor forming the main wall part 2 (refer to FIG. 1). The sub-wall partpattern 410 is a pattern for forming the sub-wall part 3 (refer to FIG.1).

In a scribe line region 412, a light shield film 414 is formed on thephase shifter film 402. Note that the scribe line region 412 is a regionwhere adjacent shots overlap each other on a wafer when transfer andexposure are subsequently conducted using a stepper (multiple exposureregion).

The halftone phase shift mask is thus structured.

The use of the halftone phase shift mask causes a phase difference of180 degrees between a light passing through the phase shifter film 402and a light passing through a transmitting region so that the contrastin the vicinity of a pattern edge can be enhanced due to interference oflight. This enables microscopic formation of the integrated circuitpart.

In a general halftone phase shift mask, however, when a plurality ofpatterns are adjacent to one another, an undesirable abnormal patterncalled a side lobe is sometimes generated in the vicinity of thesepatterns. This is a problem peculiar to the halftone phase shift mask.The side lobe is generated by mutual interference of lights passingthrough a pattern constituted of the translucent phase shifter film.Since the main wall part pattern 408 and the sub-wall part pattern 410are formed to be linear, the exposure amount therein is larger comparedwith that in the contact hole patterns 407. Accordingly, the side lobeis liable to occur in the vicinity of the main wall part and thesub-wall part.

A side lobe which is generated when the exposure is conducted using thehalftone phase shift mask shown in FIG. 30A and FIG. 30B will beexplained using FIG. 31 and FIG. 32. FIG. 31 is a view showing a sidelobe (No. 1). FIG. 32 is a view showing a side lobe (No. 2).

As shown by the arrows in FIG. 31 and FIG. 32, side lobes are generatedin the vicinity of a part having an L-shaped pattern and a part having aT-shaped pattern. Further, a side lobe is sometimes generated also in apart having a linear shaped pattern, though not shown.

Meanwhile, Japanese Patent Laid-open No. 8-279452 discloses a techniquefor preventing the generation of the side lobe by forming a dummyopening region. When the technique described in the reference is used,however, optimization is necessary every time lighting conditions and soon of photolithography are varied, which requires an enormous amount ofwork. Further, in the technique described in the reference, it isextremely difficult to prevent a side lobe generated in a part having alinear pattern.

After assiduous studies, the inventors of the present invention havefound out that the use of a phase shift mask as structured below makesit possible to manufacture the aforesaid semiconductor device whilepreventing the occurrence of the side lobe.

A phase shift mask according to a fourteenth embodiment of the presentinvention will be explained using FIG. 23A, FIG. 23B, FIG. 24A, and FIG.24B. FIG. 23A and FIG. 23B are a plan view and a cross sectional viewshowing the phase shift mask according to this embodiment. FIG. 23A is aplan view and FIG. 23B is a cross sectional view taken along the III-IIIline in FIG. 23A. FIG. 24A and FIG. 24B are enlarged views showing thephase shift mask according to this embodiment. FIG. 24A and FIG. 24Bshow enlarged views of a circled region in FIG. 23A. FIG. 24A is a planview and FIG. 24B is a cross sectional view taken along the III-III linein FIG. 24A. Though in FIG. 23A and FIG. 23B, a part of wall part piecepatterns 309 b (refer to FIG. 24A and FIG. 24B) are omitted, the wallpart piece patterns 309 b omitted in FIG. 23A and FIG. 23B are alsoshown in FIG. 24A and FIG. 24B. The same reference numerals and symbolsare used to designate the same constituent elements as those of thesemiconductor devices and the method of manufacturing the same accordingto the first to thirteenth embodiments shown in FIG. 1 to FIG. 22, andthe explanation thereof will be omitted or simplified.

A phase shift mask used in patterning the photoresist 201 shown in FIG.18A will be taken for example to explain this embodiment. Specifically,a phase shift mask used in forming, in the photoresist 201, the pattern201 a and so on for forming the contact holes reaching the source/draindiffusion layer 106 (refer to FIG. 2) and the trenches 131 (refer toFIG. 1) reaching the diffusion layer 106 a (refer to FIG. 3) will betaken for example to explain this embodiment.

In this embodiment, the phase shift mask for patterning the photoresist201 shown in FIG. 18A will be taken for example for explanation, but theprinciple of the present invention is applicable to a phase shift maskfor patterning all the other photoresists such as the photoresist 202(refer to FIG. 18C), the photoresist 204 (refer to FIG. 18F), thephotoresist 205 (refer to FIG. 18G), and the like.

As shown in FIG. 23A and FIG. 23B, a phase shifter film 302 is formed ona transparent substrate 300. As a material of the phase shifter film302, for example, a material whose light transmittance is about 4% toabout 30% and which shifts the phase of a light by 180 degrees isusable. More specifically, as the material of the phase shifter film302, for example, MoSi (molybdenum silicide) or the like is usable.

In an integrated circuit region 304 in which integrated circuit part isto be formed, namely, in a main region, the phase shifter film 302 hascontact hole patterns 307 formed therein. The contact hole patterns 307are patterns for forming contact holes as described above.

In a peripheral edge region 306 in which peripheral edge part in theperiphery of the integrated circuit part is to be formed, the phaseshifter film 302 has a main wall part pattern 308 and a sub-wall partpattern 310 formed therein. The main wall part pattern 308 is a patternfor forming the main wall part 2 (refer to FIG. 1) as described above.The sub-wall part pattern 310 is a pattern for forming the sub-wall part3 (refer to FIG. 1) as described above.

As shown in FIG. 24A and FIG. 24B, the sub-wall part pattern 310 isconstituted of a wall part piece pattern 309 a and wall part piecepatterns 309 b. The wall part piece pattern 309 a on the outer side isformed in an L shape as a whole. The plurality of wall part piecepatterns 309 b on the inner side are formed. The shape of each of thewall part piece patterns 309 b on the inner side approximates that ofthe contact hole pattern 307. The plural wall part piece patterns 309 bare arranged in a “square” shape as a whole. Incidentally, the pluralwall part piece patterns 309 b arranged in the “square” shape as a wholeare arranged in a single square here, but the arrangement of the pluralwall part piece patterns 309 b arranged in the “square” shape as a wholeis not limited to a single square and may be arranged in a two squaresor more. The wall part piece pattern 309 a on the outer side isconnected to the main wall part pattern 308. Portions where the mainwall part pattern 308 and the wall part piece pattern 309 a of thesub-wall part pattern 310 are connected to each other are formed in aT-shaped pattern.

In a scribe line region 312, a light shield film 314 consisting of, forexample, Cr is formed.

The light shield film 314 is formed also in the peripheral edge region306. The reason for forming the light shield film 314 also in theperipheral edge region 306 in this embodiment is explained as follows.The light shield film 314 prevents lights from passing through the phaseshifter film 302 so that the occurrence of the interference of thelights in the peripheral edge region 306 can be reduced. This enablesthe prevention of the occurrence of the side lobe in the peripheral edgeregion 306. As shown in FIG. 23A and FIG. 23B, the light shield film 314is formed so as to cover a range extending to, for example, about 1 μmto about 5 μm inward from corners of the sub-wall part pattern 310.

The size of patterns formed in the peripheral edge region 306 isrelatively larger than the size of patterns formed in the integratedcircuit region 304. The patterns formed in the peripheral edge region306 include, besides the main wall part pattern 308 and the sub-wallpart pattern 310, contact hole patterns (not shown) and so on. Thereason for making the size of the patterns in the peripheral edge regionlarger than the size of the patterns in the integrated circuit region isexplained as follows. Namely, in a region where the phase shifter film304 is not covered with the light shield film 314, a high resolution isobtained to enable the formation of a microscopic sized opening while,on the other hand, the region where the phase shifter film 302 iscovered with the light shield film 314 has a low resolution so that itis difficult to form a microscopic sized opening. Consequently, thewidth of the main wall part 2 (refer to FIG. 1) and the sub-wall part 3(refer to FIG. 1) is, for example, about 0.2 μm to about 10 μm on awafer which is an image plane, and the diameter of a contact hole (notshown) of the integrated circuit part 1 (refer to FIG. 1) is, forexample, about 0.1 μm to about 0.3 μm on the wafer which is the imageplane. Note that these sizes, which are sizes on the wafer as the imageplane, become five times as large on the phase shift mask when thereduction ratio is one fifth, and four times as large on the phase shiftmask when the reduction ratio is one fourth.

Thus, the halftone phase shift mask according to this embodiment isstructured.

The main characteristic of the phase shift mask according to thisembodiment lies in that the light shield film 314 is formed also in theperipheral edge region 306 as described above.

When the phase shift mask shown in FIG. 30A and FIG. 30B is used, lightspassing through the phase shifter film 302 interfere with each other inthe vicinity of the main wall part and the sub-wall part to generate theside lobe in the vicinity of the main wall part and the sub-wall part.

In this embodiment, on the other hand, the light shield film 314 isformed also in the peripheral edge region 306 so that the light shieldfilm 314 can prevent lights from passing through the phase shifter film302 in the peripheral edge region 306. Therefore, according to thisembodiment, the mutual interference of the lights in the vicinity of themain wall part 2 and the sub-wall part 3 can be reduced to enable theprevention of the side lobe generation.

Moreover, since the light shield film 314 formed in the peripheral edgeregion 306 is the same film as the light shield film 314 formed in thescribe line region 312, the phase shift mask can be manufactured withoutincreasing the number of manufacturing processes.

Fifteenth Embodiment

A phase shift mask according to a fifteenth embodiment of the presentinvention will be explained using FIG. 25A to FIG. 25C, FIG. 26A, andFIG. 26B. FIG. 25A to FIG. 25C are a plan view and cross sectional viewsshowing the phase shift mask according to this embodiment. FIG. 25A is aplan view, FIG. 25B is a cross sectional view taken along the III-IIIline in FIG. 25A, and FIG. 25C is a cross sectional view taken along theIV-IV line in FIG. 25A. FIG. 26A and FIG. 26B are enlarged views showingthe phase shift mask according to this embodiment. FIG. 26A and FIG. 26Bshow enlarged views of a circled part in FIG. 25A. FIG. 26A is a planview and FIG. 26B is a cross sectional view taken along the III-III linein FIG. 26A. Though a part of the wall part piece patterns 309 b (referto FIG. 26A and FIG. 26B) is omitted in FIG. 25A to FIG. 25C, the wallpart piece patterns 309 b omitted in FIG. 25A to FIG. 25C are also shownin FIG. 26A and FIG. 26B. Further, though a part of contact holepatterns 316 (refer to FIG. 26A and FIG. 26B) is omitted in FIG. 25A toFIG. 25C, the contact hole patterns 316 omitted in FIG. 25A to FIG. 25Care also shown in FIG. 26A and FIG. 26B. The same reference numerals andsymbols are used to designate the same constituent elements as those ofthe semiconductor devices, the method of manufacturing the same, and thephase shift mask according to the first to fourteenth embodiments shownin FIG. 1 to FIG. 24B, and the explanation thereof will be omitted orsimplified.

The main characteristic of the phase shift mask according to thisembodiment lies in that the light shield film 314 is selectively formedonly in the vicinity of the main wall part pattern 308 and the sub-wallpart pattern 310.

As shown in FIG. 25A to FIG. 25C, the light shield film 314 isselectively formed only in the vicinity of the main wall part pattern308 and the sub-wall part pattern 310 in the peripheral edge region 306.The light shield film 314 is formed so as to cover a range extending to,for example, about 1 μm to about 5 μm inward from the edges of the mainwall part pattern 308 and the sub-wall part pattern 310.

It should be noted that the range in which the light shield film 314 isformed is not limited to the range of 1 μm to 5 μm inward from the edgesof the main wall part pattern 308 and the sub-wall part pattern 310. Therange in which the light shield film 314 is formed may be appropriatelyset to such an extent that the side lobe generation can be prevented.

The light shield film 314 is not formed in regions of the peripheraledge region 306 except the vicinity of the main wall part pattern 308and the sub-wall part pattern 310.

As shown in FIG. 26A and FIG. 26B, the contact hole patterns 316 areformed in the region of the peripheral edge region 306 where the lightshield film 314 is not formed. The contact hole patterns 316 arepatterns for forming contact holes (not shown) reaching a source/draindiffusion layer of MOS transistors, for example.

The light shield film 314 is formed in the scribe line region 312similarly to the above description.

The main characteristic of the phase shift mask according to thisembodiment lies in that the light shield film 314 is formed on the phaseshifter film 302 only in the vicinity of the main wall part pattern 308and the sub-wall part pattern 310 as described above.

In the phase shift mask according to the fourteenth embodiment, thelight shield film 314 is formed all over the peripheral edge region 306.Since the resolution tends to be low in a region where the light shieldfilm 314 is formed, microscopic contact holes cannot be formed insidethe peripheral edge part when the phase shift mask according to thefourteenth embodiment is used. Accordingly, microscopic MOS transistorscannot be formed in the peripheral edge part when the phase shift maskaccording to the fourteenth embodiment is used.

In this embodiment, on the other hand, the light shield film 314 isselectively formed only in the vicinity of the main wall part pattern308 and the sub-wall part pattern 310 in the peripheral edge region 306.Therefore, according to this embodiment, a high resolution is obtainablein the region of the peripheral edge region 306 where the light shieldfilm 314 is not formed. Consequently, according to this embodiment,microscopic contact holes can be formed also in the peripheral edgepart. Therefore, according to this embodiment, microscopic elements suchas MOS transistors can be formed also in the peripheral edge part.According to this embodiment, it is possible to secure a wide space fora region in which microscopic elements such as MOS transistors can beformed, which can contribute to the reduction in chip size.

Sixteenth Embodiment

A phase shift mask according to a sixteenth embodiment of the presentinvention will be explained using FIG. 27A and FIG. 27B. FIG. 27A andFIG. 27B are a plan view and a cross sectional view showing the phaseshift mask according to this embodiment. The same reference numerals andsymbols are used to designate the same constituent elements as those ofthe semiconductor devices, the method of manufacturing the same, and thephase shift masks according to the first to fifteenth embodiments shownin FIG. 1 to FIG. 26B, and the explanation thereof will be omitted orsimplified.

The main characteristics of the phase shift mask according to thisembodiment lie in that the light shield film 314 is not formed in theperipheral edge region 306, that corner portions of the main wall partpattern 308 a and a sub-wall part pattern 310 a do not have a rightangle but they have an obtuse angle, and that the main wall part pattern308 a and the sub-wall part pattern 310 a are formed so as to beinsolated from each other.

As shown in FIG. 27A and FIG. 27B, the light shield film 314 is notformed in the peripheral edge region 306 in this embodiment.

The corner portion of the main wall part pattern 308 a does not have aright angle but has an obtuse angle. Concretely, the angle of the cornerportion of the main wall part pattern 308 a is 135 degrees.

The sub-wall part pattern 310 a is constituted of a wall part piecepattern 309 c and the wall part piece patterns 309 b. The corner portionof the wall part piece pattern 309 c does not have a right angle but hasan obtuse angle. Concretely, the angle of the corner portion of the wallpart piece pattern 309 c is 135 degrees.

The reason why the corner portions of the main wall part pattern 308 aand the sub-wall part pattern 310 a do not have a right angle but has anobtuse angle in this embodiment is to eliminate portions having anL-shaped pattern to prevent the generation of the side lobe.

It should be noted that the angle of the corner portions of the mainwall part pattern 308 a and the sub-wall part pattern 310 a, thoughbeing set to 135 degrees here, is not limited to 135 degrees. When theangle of the corner portions is obtuse, the generation of the side lobecan be reduced to some extent. Specifically, when the angle of thecorner portions is 100 degrees or larger, the generation of the sidelobe can be effectively reduced. When the angle of the corner portionsis 110 degrees or larger, the generation of the side lobe can be moreeffectively reduced. Further, when the angle of the corner portions is120 degrees or larger, the generation of the side lobe can be still moreeffectively reduced.

The main wall part pattern 308 a and the sub-wall part pattern 310 a areformed to be apart from each other.

The reason why the main wall part pattern 308 a and the sub-wall partpattern 310 a are formed to be apart from each other in this embodimentis to eliminate a portion having a T-shaped pattern to prevent thegeneration of the side lobe.

Thus, according to this embodiment, since the corner portions of themain wall part pattern 308 a and the sub-wall part pattern 310 a do nothave a right angle but they have an obtuse angle, and in addition, themain wall part pattern 308 a and the sub-wall part pattern 310 a areformed to be apart from each other, the generation of the side lobe inthe vicinity of the main wall part 2 and the side-wall part 3 can beprevented even when the light shield film 314 is not formed in thevicinity of the main wall part pattern 308 a and the sub-wall partpattern 310 a.

Seventeenth Embodiment

A phase shift mask according to a seventeenth embodiment of the presentinvention will be explained using FIG. 28A and FIG. 28B. FIG. 28A andFIG. 28B are a plan view and a cross sectional view showing the phaseshift mask according to this embodiment. FIG. 28A is a plan view andFIG. 28B is a cross sectional view taken along the III-III line in FIG.28A. The same reference numerals and symbols are used to designate thesame constituent elements as those of the semiconductor devices, themethod of manufacturing the same, and the phase shift masks according tothe first to sixteenth embodiments shown in FIG. 1 to FIG. 27B, and theexplanation thereof will be omitted or simplified.

The main characteristic of the phase shift mask according to thisembodiment lies in that a sub-wall part pattern 310 b is constituted ofa plurality of wall part piece patterns 309 b, 309 d, 309 e which areisolated from one another.

As shown in FIG. 28A and FIG. 28B, the sub-wall part pattern 310 b isconstituted of the plural wall part piece patterns 309 b, 309 d, 309 ewhich are isolated from one another. Each of the wall part piecepatterns 309 d, 309 e is formed in a linear shape.

The reason why the sub-wall part pattern 310 b is thus formed in thisembodiment is to effectively prevent the generation of the side lobe ina corner portion of the sub-wall part 310 b.

Thus, according to this embodiment, since the sub-wall part pattern 310b is constituted of the plural wall part piece patterns 309 b, 309 d,309 e which are isolated from one another, the sub-wall part pattern 310b without any corner portion can be formed. Therefore, according to thisembodiment, the generation of the side lobe can be prevented moreeffectively.

Eighteenth Embodiment

A phase shift mask according to an eighteenth embodiment of the presentinvention will be explained using FIG. 29A and FIG. 29B. FIG. 29A andFIG. 29B are a plan view and a cross sectional view showing the phaseshift mask according to this embodiment. FIG. 29A is a plan view andFIG. 29B is a cross sectional view taken along the III-III line in FIG.29A. The same reference numerals and symbols are used to designate thesame constituent elements as those of the semiconductor devices, themethod of manufacturing the same, and the phase shift masks according tothe first to seventeenth embodiments shown in FIG. 1 to FIG. 28B, andthe explanation thereof will be omitted or simplified.

The main characteristic of the phase shift mask according to thisembodiment lies in that not only the wall part piece patterns 309 b onthe inner side but also wall part piece patterns 309 f on the outer sideare formed in a dot shape.

As shown in FIG. 29A and FIG. 29B, the sub-wall part pattern 310 c isconstituted of the dot-shaped wall part piece patterns 309 f and thedot-shaped wall part piece patterns 309 b. The plurality of wall partpiece patterns 309 f are formed. The wall part piece patterns 309 f arearranged in an L shape as a whole. The wall part piece patterns 309 bare arranged in a “square” shape as a whole similarly to the abovedescription. The wall part piece patterns 309 f have a shape approximateto that of the contact hole patterns 316 similarly to the wall partpiece patterns 309 b.

According to this embodiment, the generation of the side lobe can bealso prevented since portions having an L-shaped pattern and a T-shapedpattern can be eliminated.

—Modification—

The present invention is not limited to the embodiments described above,and various modifications may be made.

For example, positions and the patterns of the comb-like electrodeswhich constitute the resistance value measuring part are notparticularly limited. For example, they are arranged at positionssandwiching the sub-wall part between the main wall part and themselves,so as to surround the sub-wall part with the main wall part. Further,according to the present invention, the resistance value measuring partmay not be necessarily provided. Moreover, it is possible to allow thesub-wall part to function as the resistance value measuring part. Inthis case, for example, the sub-wall part is formed so as to include apair of electrodes, and pads for supplying signals from the outside maybe provided to each of the pair of the electrodes. However, the metalfilms inside the sub-wall part which are electrically connected to thepads need to be electrically insulated from the substrate and the mainwall part.

Furthermore, although the plan shape of the semiconductor deviceaccording to the present invention is not particularly limited, apolygon such as a quadrangle is favorable for the convenience ofmanufacturing. In this case, it is preferable that the sub-wall part isarranged between a vertex of the polygon and the integrated circuitpart. This is because the stress is likely to concentrate at the vertexof the polygon.

Further, as to the lamination structure of the main wall part and thesub-wall part according to the present invention, the wide trenches andthe narrow trenches are not necessarily at the same positions in planview. For example, as shown in FIG. 21, it may be structured so that thenarrow trenches are alternately at the same positions in plan view.

Moreover, the above-described first to the thirteenth embodiments may becombined appropriately.

Furthermore, in the above-described first to the thirteenth embodiments,as shown in FIG. 22, a part of the trench 131 in a sub-wall part 3 n maybe replaced by contact holes 139 which are the same as the contact holesin the integrated circuit part 1. FIG. 22 is a layout showing thestructure when the replacement is applied to the twelfth embodimentshown in FIG. 16.

Further, a part of the organic insulation films may be replaced by theCu layer.

Moreover, in the embodiments described above, the light shield film isformed in the vicinity of both the main wall part pattern and thesub-wall part pattern, but the light shield film need not be alwaysformed in the vicinity of both the main wall part pattern and thesub-wall part pattern. For example, the light shield film may be formedonly in the vicinity of the main wall part pattern.

Further, in the embodiments described above, the light shield film isformed all over the vicinity of the main wall part pattern and thesub-wall part pattern, but the light shield film may be formed only in apart of the vicinity of the main wall part pattern and the sub-wall partpattern. In other words, the light shield film may be selectively formedonly in a place where the side lobe is easily generated. For example,the light shield film may be selectively formed only in the vicinity ofa place having an L-shaped pattern and a place having a T-shapedpattern.

Moreover, in the embodiments described above, the examples of preventingthe side lobe generated in the vicinity of the main wall part and thesub-wall part are explained, but the present invention is applicable tothe case where the side lobe generated in any place not limited to thevicinity of the main wall part and the sub-wall part is prevented. Forexample, the present invention is applicable to the case where the sidelobe generation is prevented in the vicinity of a fuse pattern.

Further, in the embodiments described above, the wall part piecepatterns 309 b are formed in a dot shape, but the shape of the wall partpiece patterns 309 b is not limited to the dot shape and may be, forexample, a linear shape.

As described above, according to the present invention, it is possibleto make it difficult to cause the peeling between layers and the crackbecause the stress is easily dispersed near the region where thesub-wall part is provided. Therefore, it is possible to keep an entryratio of moisture accompanied by the occurrence of the crack extremelylow, and to ensure an extremely high moisture resistance. Further, it ispossible to avoid the increase in the number of processes for formingsuch a structure. Furthermore, by connecting the main wall part and thesub-wall part to each other, it is possible to prevent the progress ofthe crack and the entry of moisture further.

Further, according to the present invention, since, in the phase shiftmask, the light shield film is formed in the peripheral edge region inwhich the peripheral edge parts are to be formed, the light shield filmcan prevent lights from passing through the phase shifter film in theperipheral edge region. Consequently, according to the presentinvention, the mutual interference of the lights in the vicinity of themain wall part and the sub-wall part can be reduced to enable theprevention of the side lobe generation.

The present embodiments are to be considered in all respects asillustrative and no restrictive, and all changes which come within themeaning and range of equivalency of the claims are therefore intended tobe embraced therein. The invention may be embodied in other specificforms without departing from the spirit or essential characteristicsthereof.

1. A method of manufacturing a semiconductor device including an integrated circuit part in which an integrated circuit is formed and a main wall part including metal films surrounding said integrated circuit part, comprising the step of: selectively forming a sub-wall part including metal films between said integrated circuit part and said main wall part, in parallel to formation of said integrated circuit part and said main wall part.
 2. The method of manufacturing the semiconductor device according to claim 1, wherein selectively forming said sub-wall part comprises the step of simultaneously forming a part of wires in said integrated circuit and a part of said metal films which is provided to each of said main wall part and said sub-wall part above a semiconductor substrate.
 3. The method of manufacturing the semiconductor device according to claim 2, wherein selectively forming said sub-wall part comprises the steps of: forming interlayer insulation films above said semiconductor substrate over the entire surface; and forming at least one opening in each of regions to be said integrated circuit part, said main wall part and said sub-wall part in said interlayer insulation films, wherein said wires and said metal films are formed on said interlayer insulation films and in said openings.
 4. The method of manufacturing the semiconductor device according to claim 1, wherein a plan shape of the semiconductor device is substantially a polygon, and wherein said sub-wall part is formed between a vertex of said polygon and said integrated circuit part.
 5. The method of manufacturing the semiconductor device according to claim 1, further comprising the step of: forming a resistance value measuring part including: a pair of electrodes arranged in a region between said sub-wall part and said integrated circuit part; and pads for supplying signals from the outside to each of the pair of said electrodes, in parallel to formation of said integrated circuit part, said main wall part and said sub-wall part.
 6. The method of manufacturing the semiconductor device according to claim 1, wherein a part of said sub-wall part is connected to said main wall part. 